Open Access Case Report

Effect of Infrared Radiation on the Hydrogen in Thin Films Double Barriers Based Melt Silicone-Germany

BA Najafov1, GI Isakov2 and FP Abasov1*

1Institute of Radiation Problems of Azerbaijan National Academy of Sciences, Azerbaijan

2Institute of Physics of Azerbaijan National Academy of Sciences, Azerbaijan

Corresponding Author

Received Date: December 08, 2018;  Published Date: December 17, 2018


Possibilities of plasma chemical deposition of α-Si1-x Gex:H (x=0÷1) films undoped and doped with PH3 or B2H6 have been analyzed from the viewpoint of their application in p-i-n structures of solar cell. The optical properties are considered, and the amount of hydrogen contained in those films is determined. The film properties are found to strongly depend on the film composition and the hydrogenation level. The number of hydrogen atoms in the films is varied by changing the gas mixture composition, and IR absorption in α-Si:H and α-Ge:H films is measured. The α-Si:H and а-Si0,88Ge1,2:H films were used to fabricate three-layer solar with an element area of 1,3 sm2 and an efficiency (η) of 9.5 %.

Keywords: Effect infrared on thin films; Amorphous silicon; Solar cells; Efficiency; Optical properties; Oscillator; Absorption coefficient; Effusion of hydrogen; Deposition rate

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