Review Article
Evidence of Electron Charging Induced Alternating Currents in Nanopillar Transistor
Te Chien Wang and Yue Min Wan*
Department of Electronic Engineering, I-Shou University, Taiwan
Yue Min Wan, Department of Electronic Engineering, I-Shou University, Dashu District, Kaohsiung City, Taiwan.
Received Date: June 06 , 2019; Published Date: June 10 , 2019
Abstract
Study of electron charging in nanopillar transistor at 300K shows that elastic vibration is an automatic behavior in the device. The frequency observed in the drain-source current is found to agree with the charging frequency. Given a quantum dot of size ~10x10x9nm3, the maximum displacement estimated is 0.3nm. Once the displacement diminishes to zero, single-electron tunnel dominates the I-V. A forced vibration model is proposed to explain the correlation between surface charges and vibrations. When the distribution of charges is uniformly on each SiNx atom, vibration becomes stable and can yield homogenous damping current.
Keywords:Quantum dot; Nanopillar transistor; Pulse voltage; Mechanical vibration
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Te Chien Wang, Yue Min Wan. Evidence of Electron Charging Induced Alternating Currents in Nanopillar Transistor. Glob J Eng Sci. 2(4): 2019. GJES.MS.ID.000543.
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