Research Article
Metal Insulator Transition in Vanadium Dioxide Hydrated by Means of the Plasma-Immersion Ion Implantation Method
A Pergament*, S Burdyukh, O Berezina and P Boriskov
Petrozavodsk State University, Russia
Pergament A, Institute of Physics and Technology, Petrozavodsk State University, Petrozavodsk 185910, Russia.
Received Date: February 21, 2019; Published Date: March 01, 2019
Abstract
In the work, we explore the modification of the structure of vanadium dioxide films, as well as the metal-semiconductor phase transition in them, when hydrated by the method of plasma-immersion ion implantation. Based on a detailed X-ray analysis and the Raman spectra of the initial and hydrated films, it is shown that the plasma-ion modification of the transition and the metallization of vanadium dioxide (at a hydrogen concentration above 10at. %) are most likely associated with electron-correlation effects amplified by hydrogen implantation and an increase in the free charge carrier density in the material. Meanwhile, the structural changes at the transition practically do not manifest themselves: the hydrated metallic vanadium dioxide remains in the monoclinic phase. The results of plasma-immersion implantation are compared with experiments where other methods of hydration of vanadium dioxide are applied.
Keywords: Vanadium dioxide; Metal-Insulator transition; Crystal structure; Doping; Plasma-immersion ion implantation.
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A Pergament , S Burdyukh, O Berezina, P Boriskov. Metal Insulator Transition in Vanadium Dioxide Hydrated by Means of the Plasma- Immersion Ion Implantation Method. Mod Concept Material Sci. 1(2): 2019. MCMS.MS.ID.000506.