Open Access Research Article

Metal Insulator Transition in Vanadium Dioxide Hydrated by Means of the Plasma-Immersion Ion Implantation Method

A Pergament*, S Burdyukh, O Berezina and P Boriskov

Petrozavodsk State University, Russia

Corresponding Author

Received Date: February 21, 2019;  Published Date: March 01, 2019


In the work, we explore the modification of the structure of vanadium dioxide films, as well as the metal-semiconductor phase transition in them, when hydrated by the method of plasma-immersion ion implantation. Based on a detailed X-ray analysis and the Raman spectra of the initial and hydrated films, it is shown that the plasma-ion modification of the transition and the metallization of vanadium dioxide (at a hydrogen concentration above 10at. %) are most likely associated with electron-correlation effects amplified by hydrogen implantation and an increase in the free charge carrier density in the material. Meanwhile, the structural changes at the transition practically do not manifest themselves: the hydrated metallic vanadium dioxide remains in the monoclinic phase. The results of plasma-immersion implantation are compared with experiments where other methods of hydration of vanadium dioxide are applied.

Keywords: Vanadium dioxide; Metal-Insulator transition; Crystal structure; Doping; Plasma-immersion ion implantation.

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