Growth of Vertically Aligned InGaN Nanowires

Fangliang Gao

Mini Review

Growth of Vertically Aligned InGaN Nanowires

Fangliang Gao*

Institute of Semiconductor of Science and Technology, South China Normal University, China

Corresponding Author

Received Date: August 19, 2019; Published Date: August 22, 2019

Abstract

InGaN nanowires (NWs) have attracted a lot of research interest in the past decade. They contain both the intrinsic properties of InGaN materials, and some unique properties induced by the NW structures. This article reviews the growth methods to obtain InGaN NWs, with discussions on different epitaxy methods.