Using New Concepts in Nanoscience to Develop New Materials

In the present work, silicon nanowires (SiNWs) have been grown on crystalline silicon (Si) (100) oriented and hydrogenated amorphous silicon a-Si:H coated c-Si (a-Si: H/c-Si) substrates by plasma-enhanced chemical vapor deposition (PECVD) via the vapor-liquid-solid (VLS) process at different temperature. Tin (Sn) catalyst coating with a thickness of 1 nm were used as metal catalysts. A hydrogen plasma was applied to reduce the oxide and to form Sn droplets. SiNWs were then grown by introducing pure silane (SiH4) into the reactor with a flow rate of 5 sccm and a chamber pressure of 1.33 mbar, at a substrate temperature between 400 and 600°C. Their morphological and surface characteristics have been investigated using Hitachi S4800 scanning electron microscopy (SEM). Morphology obtained from SEM shows tapered growth of NWs with a distinctively sharp tip.

Keywords: Silicon nanowires SiNWs; Plasma enhanced chemical vapor deposition (PECVD); Tin (Sn) catalyst