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Open Access Opinion

Using New Concepts in Nanoscience to Develop New Materials

Xiang Zhang1,2*

1The founder of Cambridge Victoria College and Principal Consultant of Lucideon, Cambridge Science Park, UK

2Professor of Sinano (CAS) and Xiangcheng Medical Materials Technology, Suzhou, China

Corresponding Author

Received Date: February 03, 2020;  Published Date: February 20, 2020


In the present work, silicon nanowires (SiNWs) have been grown on crystalline silicon (Si) (100) oriented and hydrogenated amorphous silicon a-Si:H coated c-Si (a-Si: H/c-Si) substrates by plasma-enhanced chemical vapor deposition (PECVD) via the vapor-liquid-solid (VLS) process at different temperature. Tin (Sn) catalyst coating with a thickness of 1 nm were used as metal catalysts. A hydrogen plasma was applied to reduce the oxide and to form Sn droplets. SiNWs were then grown by introducing pure silane (SiH4) into the reactor with a flow rate of 5 sccm and a chamber pressure of 1.33 mbar, at a substrate temperature between 400 and 600°C. Their morphological and surface characteristics have been investigated using Hitachi S4800 scanning electron microscopy (SEM). Morphology obtained from SEM shows tapered growth of NWs with a distinctively sharp tip.

Keywords: Silicon nanowires SiNWs; Plasma enhanced chemical vapor deposition (PECVD); Tin (Sn) catalyst

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