Thin Films and Heterojunctions Composed with
Electron Doped La1-XHfxMnO3 Manganite

Liu Yunyun; Huang Chuanxin; Wang Junbao; Wang Meng; Zhang Bin; Zheng Yanbin; Tian Zhongjun; Jia Jikui; Lv Yiying; Gao Ju

Review Article

Thin Films and Heterojunctions Composed with Electron Doped La_1-XHf_xMnO₃ Manganite

Liu Yunyun, Huang Chuanxin, Wang Junbao, Wang Meng, Zhang Bin, Zheng Yanbin, Tian Zhongjun, Jia Jikui, Lv Yiying, and Gao Ju*

School for Optoelectronic Engineering, Zaozhuang University, Zaozhuang, Shandong, 277160, China

Corresponding Author

Received Date:August 19, 2022; Published Date: August 25, 2022

Abstract

All oxide heterojunctions have been fabricated with electron doped La_1-XHf_xMnO₃ manganite. The sole tetravalent state of Hf4+ ensures a n-type conductive mechanism in La_1-XHf_xMnO₃ manganite. La_1-XHf_xMnO₃/Nb-SrTiO3 heterojunctions were fabricated. These junctions showed excellent rectifying characteristics in a wide temperature range. Their transport properties are tunable electrically and magnetically. Such heterojunctions may be of potential in developing functional field-effect transistors of manganites.

Keywords:Heterojunctions; Manganite; Field effects; Thin films

Article Details

Citation

Liu Yunyun, Huang Chuanxin, Wnag Junbao, Wang Meng, Zhang Bin, Zheng Yanbin, Tian Zhongjun, Jia Jikui, Lu Yiying, and Gao Ju*. Thin Films and Heterojunctions Composed with Electron Doped La1-XHfxMnO3 Manganite. Glob J Eng Sci. 10(1): 2022. GJES. MS.ID.000727.